Decoupling electric field and temperature-driven atomistic forming mechanisms in TaOx/HfO2-based ReRAMs using reactive molecular dynamics simulations
Published in arXiv (preprint), 2025
Find the preprint here. The forming simulations used my open-source LAMMPS-CTIP-EChemDID package.
Recommended citation: Lahkar, S., Bragaglia, V., Bagheri, B., Falcone, D. F., Galetta, M., Sousa, M., Todri-Sanial, A. (2025). Decoupling electric field and temperature-driven atomistic forming mechanisms in TaOx/HfO2-based ReRAMs using reactive molecular dynamics simulations. arXiv:2505.24468 (preprint). https://arxiv.org/abs/2505.24468